The decription of Import package graphene

We investigate electric transport in graphene on SiO2 in the high field limit and report on the formation of p-n junctions. Previously, doping of Import package graphene has been achieved by using multiple electrostatic gates, or charge transfer from adsorbants. Here we demonstrate a novel approach to create p-n junctions by changing the local electrostatic potential in the vicinity of one of the contacts without the use of extra gates. The approach is based on the electronic modification not of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled.
    1.Kish Graphite (grade 50): 1 gram.
    2.Graphene Oxide (Aqueous Dispersion): 25 ml
    3.Pristine graphene in solution: 25 ml.
    4.Eight small Silicon / 300 nm Silicon Dioxide wafers: 10 mmx10 mm squares.
    5.Graphene Scotch tape: 1 roll
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